VISHAY · FETs & Power MOSFETs · MPN SI8816EDB-T2-E1
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| Gate Charge(Qg) | 8nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 35pF |
| Current - Continuous Drain(Id) | 2.3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.4V |
| Pd - Power Dissipation | 900mW |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF |
| RDS(on) | 142mΩ@2.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 195pF |
| Vgs | ±12V |
N-Channel 30V 2.3A 0.9W Surface Mount BGA-4