VISHAY · FETs & Power MOSFETs · MPN SI8812DB-T2-E1
No reviews yet — be the first to review VISHAY SI8812DB-T2-E1.
| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 3.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 400mV |
| Pd - Power Dissipation | 500mW |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 59mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
20V 3.2A 400mV 500mW 59mΩ@4.5V 1 N-channel UFBGA-4 Single FETs, MOSFETs RoHS