VISHAY · FETs & Power MOSFETs · MPN SI8810EDB-T2-E1
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| Gate Charge(Qg) | 8nC@8V |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | - |
| Current - Continuous Drain(Id) | 2.9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 900mV |
| Pd - Power Dissipation | 900mW |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 125mΩ@1.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
| Type | N-Channel |
20V 2.9A 900mV 900mW 125mΩ@1.5V 1 N-channel N-Channel BGA-4 Single FETs, MOSFETs RoHS