VISHAY · FETs & Power MOSFETs · MPN SI8806DB-T2-E1
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| Gate Charge(Qg) | 17nC@8V |
|---|---|
| Drain to Source Voltage | 12V |
| Current - Continuous Drain(Id) | 3.9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 400mV |
| Pd - Power Dissipation | 500mW |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 43mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
12V 3.9A 400mV 500mW 43mΩ@4.5V 1 N-channel XFBGA-4 Single FETs, MOSFETs RoHS