VISHAY · FETs & Power MOSFETs · MPN SI8802DB-T2-E1
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| Gate Charge(Qg) | 4.3nC@4.5V |
|---|---|
| Drain to Source Voltage | 8V |
| Current - Continuous Drain(Id) | 3.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 700mV |
| Pd - Power Dissipation | 600mW |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 54mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
| Type | N-Channel |
N-Channel 8V 3.5A 0.6W Surface Mount XFBGA-4