VISHAY · FETs & Power MOSFETs · MPN SI8800EDB-T2-E1
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| Gate Charge(Qg) | 3.2nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 2.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 500mW |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 80mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
| Vgs | ±8V |
| Type | N-Channel |
N-Channel 20V 2.8A 0.5W Surface Mount XFBGA-4