VISHAY · FETs & Power MOSFETs · MPN SI8499DB-T2-E1
No reviews yet — be the first to review VISHAY SI8499DB-T2-E1.
| Gate Charge(Qg) | 14.5nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 250pF |
| Current - Continuous Drain(Id) | 7.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.3V |
| Pd - Power Dissipation | 2.77W |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF |
| RDS(on) | 32mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.3nF |
| Type | P-Channel |
P-Channel 20V 7.8A 2.77W Surface Mount MicroFoot-7