VISHAY · FETs & Power MOSFETs · MPN SI8497DB-T2-E1
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| Gate Charge(Qg) | 49nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 5.9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 500mV |
| Pd - Power Dissipation | 2.77W;13W |
| Reverse Transfer Capacitance (Crss@Vds) | 102pF |
| RDS(on) | 53mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.32nF |
30V 5.9A 500mV 53mΩ@4.5V 1 P-Channel UFBGA-6 Single FETs, MOSFETs RoHS