VISHAY · FETs & Power MOSFETs · MPN SI8489EDB-T2-E1
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| Gate Charge(Qg) | 9.5nC@10V |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 125pF |
| Current - Continuous Drain(Id) | 3.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 500mV |
| Pd - Power Dissipation | 780mW |
| Reverse Transfer Capacitance (Crss@Vds) | 115pF |
| RDS(on) | 44mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 765pF |
| Type | P-Channel |
P-Channel 20V 3.6A 0.78W Surface Mount UFBGA-4