VISHAY · FETs & Power MOSFETs · MPN SI8487DB-T1-E1
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| Gate Charge(Qg) | 52nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 200pF |
| Current - Continuous Drain(Id) | 4.9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 600mV |
| Pd - Power Dissipation | 1.1W |
| Reverse Transfer Capacitance (Crss@Vds) | 330pF |
| RDS(on) | 31mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 4.48nF |
| Type | P-Channel |
P-Channel 30V 4.9A 1.1W Surface Mount UFBGA-4