VISHAY · FETs & Power MOSFETs · MPN SI8483DB-T2-E1
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| Gate Charge(Qg) | 65nC@10V |
|---|---|
| Drain to Source Voltage | 12V |
| Output Capacitance(Coss) | - |
| Current - Continuous Drain(Id) | 16A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 800mV |
| Pd - Power Dissipation | 13W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 92mΩ@1.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | - |
| Type | P-Channel |
12V 16A 800mV 13W 92mΩ@1.5V 1 P-Channel P-Channel BGA-6 Single FETs, MOSFETs RoHS