VISHAY · FETs & Power MOSFETs · MPN SI8481DB-T1-E1
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| Gate Charge(Qg) | 47nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 9.7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 900mV |
| Pd - Power Dissipation | 1.1W |
| Reverse Transfer Capacitance (Crss@Vds) | 81pF |
| RDS(on) | 21mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 2.5nF |
20V 9.7A 900mV 1.1W 21mΩ@4.5V 1 P-Channel MicroFoot-4 Single FETs, MOSFETs RoHS