VISHAY · FETs & Power MOSFETs · MPN SI8472DB-T2-E1
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 18nC@8V |
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | - |
| Current - Continuous Drain(Id) | 4.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 900mV |
| Pd - Power Dissipation | 1.8W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 70mΩ@1.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
N-Channel 20V 4.5A 1.8W Surface Mount UFBGA-4