VISHAY · FETs & Power MOSFETs · MPN SI8466EDB-T2-E1
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| Gate Charge(Qg) | 13nC@4.5V |
|---|---|
| Drain to Source Voltage | 8V |
| Current - Continuous Drain(Id) | 5.4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 700mV |
| Pd - Power Dissipation | 780mW;1.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 192pF |
| RDS(on) | 43mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 710pF |
8V 5.4A 700mV 43mΩ@4.5V 1 N-channel UFBGA-4 Single FETs, MOSFETs RoHS