VISHAY · FETs & Power MOSFETs · MPN SI8457DB-T1-E1
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| Gate Charge(Qg) | 37nC@8V |
|---|---|
| Drain to Source Voltage | 12V |
| Current - Continuous Drain(Id) | 10.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 400mV |
| Pd - Power Dissipation | 1.1W |
| Reverse Transfer Capacitance (Crss@Vds) | 620pF |
| RDS(on) | 19mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 2.9nF |
12V 10.2A 400mV 1.1W 19mΩ@4.5V 1 P-Channel MicroFoot-4(1.6x1.6) Single FETs, MOSFETs RoHS