VISHAY · FETs & Power MOSFETs · MPN SI8416DB-T2-E1
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| Gate Charge(Qg) | 17nC@4.5V |
|---|---|
| Drain to Source Voltage | 8V |
| Current - Continuous Drain(Id) | 9.3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 350mV |
| Pd - Power Dissipation | 2.77W |
| Reverse Transfer Capacitance (Crss@Vds) | 450pF |
| RDS(on) | 23mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.47nF |
8V 9.3A 350mV 2.77W 23mΩ@4.5V 1 N-channel MicroFoot-6 Single FETs, MOSFETs RoHS