VISHAY · FETs & Power MOSFETs · MPN SI8413DB-T1-E1
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| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | 21nC@4.5V |
| Current - Continuous Drain(Id) | 6.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 600mV |
| Pd - Power Dissipation | 2.77W |
| RDS(on) | 48mΩ@4.5V |
| Number | 1 P-Channel |
20V 6.5A 600mV 2.77W 48mΩ@4.5V 1 P-Channel XFBGA-4 Single FETs, MOSFETs RoHS