VISHAY · FETs & Power MOSFETs · MPN SI8410DB-T2-E1
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| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | 16nC@8V |
| Current - Continuous Drain(Id) | 5.7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 850mV |
| Pd - Power Dissipation | 1.8W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 68mΩ@1.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 620pF |
| Type | N-Channel |
20V 5.7A 850mV 1.8W 68mΩ@1.5V 1 N-channel N-Channel MicroFoot-4(1x1) Single FETs, MOSFETs RoHS