VISHAY · FETs & Power MOSFETs · MPN SI8409DB-T1-E1
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 26nC@4.5V |
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 6.3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.4V |
| Pd - Power Dissipation | 1.77W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 46mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | - |
30V 6.3A 1.4V 1.77W 46mΩ@4.5V 1 P-Channel XFBGA-4 Single FETs, MOSFETs RoHS