VISHAY · FETs & Power MOSFETs · MPN SI8406DB-T2-E1
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 7.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 2.77W;13W |
| Reverse Transfer Capacitance (Crss@Vds) | 61pF |
| RDS(on) | 33mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 830pF |
20V 7.8A 33mΩ@4.5V 1 N-channel MicroFoot-6 Single FETs, MOSFETs RoHS