VISHAY · FETs & Power MOSFETs · MPN SI8401DB-T1-E1
No reviews yet — be the first to review VISHAY SI8401DB-T1-E1.
| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | 17nC@4.5V |
| Current - Continuous Drain(Id) | 4.9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.4V |
| Pd - Power Dissipation | 2.77W |
| RDS(on) | 65mΩ@4.5V |
| Number | 1 P-Channel |
20V 4.9A 1.4V 2.77W 65mΩ@4.5V 1 P-Channel XFBGA-4 Single FETs, MOSFETs RoHS