VISHAY SI7994DP-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI7994DP-T1-GE3

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Specifications

Current - Continuous Drain(Id)60A
Pd - Power Dissipation3.5W
RDS(on)7mΩ@4.5V
Gate Threshold Voltage (Vgs(th))3V
Drain to Source Voltage30V
TypeN-Channel
Number2 N-Channel
Input Capacitance(Ciss)450pF
Gate Charge(Qg)24nC
Operating Temperature-55℃~+150℃

Technical details

N-Channel 30V 60A 3.5W Surface Mount PowerPAKSO-8

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