VISHAY SI7972DP-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI7972DP-T1-GE3

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Specifications

Current - Continuous Drain(Id)8A
RDS(on)18mΩ@10V
Pd - Power Dissipation22W
Gate Threshold Voltage (Vgs(th))2.7V
Drain to Source Voltage60V
Reverse Transfer Capacitance (Crss@Vds)20pF
Number2 N-Channel
Input Capacitance(Ciss)1.05nF
Gate Charge(Qg)7.1nC@10V
Operating Temperature-55℃~+150℃

Technical details

N-Channel Array 60V Surface Mount PowerPAKSO-8

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