VISHAY · FETs & Power MOSFETs · MPN SI7956DP-T1-GE3
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| Current - Continuous Drain(Id) | 4.1A |
|---|---|
| RDS(on) | 115mΩ@6V |
| Pd - Power Dissipation | 3.5W |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Drain to Source Voltage | 150V |
| Type | N-Channel |
| Number | 2 N-Channel |
| Gate Charge(Qg) | 26nC@10V |
4.1A 115mΩ@6V 3.5W 4V 2 N-Channel PowerPAK-SO-8 FET, MOSFET Arrays RoHS