VISHAY · FETs & Power MOSFETs · MPN SI7956DP-T1-E3
No reviews yet — be the first to review VISHAY SI7956DP-T1-E3.
| Configuration | Half-Bridge |
|---|---|
| Current - Continuous Drain(Id) | 4.1A |
| RDS(on) | 115mΩ@6V |
| Pd - Power Dissipation | 3.5W |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Drain to Source Voltage | 150V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | - |
| Gate Charge(Qg) | 26nC@10V |
| Operating Temperature | -55℃~+150℃ |
4.1A 115mΩ@6V 3.5W 4V 2 N-Channel FET, MOSFET Arrays RoHS