VISHAY SI7949DP-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI7949DP-T1-GE3

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Specifications

Current - Continuous Drain(Id)5A
Pd - Power Dissipation3.5W
RDS(on)80mΩ@4.5V
Gate Threshold Voltage (Vgs(th))3V
Drain to Source Voltage60V
TypeP-Channel
Reverse Transfer Capacitance (Crss@Vds)-
Number2 P-Channel
Input Capacitance(Ciss)-
Gate Charge(Qg)40nC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)-

Technical details

P-Channel 60V 5A 3.5W Surface Mount PowerPAKSO-8

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