VISHAY · FETs & Power MOSFETs · MPN SI7949DP-T1-E3
No reviews yet — be the first to review VISHAY SI7949DP-T1-E3.
| Current - Continuous Drain(Id) | 5A |
|---|---|
| Pd - Power Dissipation | 3.5W |
| RDS(on) | 80mΩ@4.5V |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Drain to Source Voltage | 60V |
| Type | P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Number | 2 P-Channel |
| Input Capacitance(Ciss) | - |
| Gate Charge(Qg) | 40nC@10V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | - |
5A 3.5W 80mΩ@4.5V 3V 2 P-Channel PowerPAK-SO-8 FET, MOSFET Arrays RoHS