VISHAY SI7946ADP-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI7946ADP-T1-GE3

No reviews yet — be the first to review VISHAY SI7946ADP-T1-GE3.

Specifications

Current - Continuous Drain(Id)7.7A
RDS(on)256mΩ@6V
Pd - Power Dissipation19.8W
Gate Threshold Voltage (Vgs(th))3.5V
Drain to Source Voltage150V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)-
Number2 N-Channel
Input Capacitance(Ciss)230pF
Gate Charge(Qg)6.5nC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)47pF

Technical details

7.7A 256mΩ@6V 19.8W 3.5V 2 N-Channel FET, MOSFET Arrays RoHS

Related FETs & Power MOSFETs