VISHAY · FETs & Power MOSFETs · MPN SI7942DP-T1-GE3
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| Current - Continuous Drain(Id) | 5.9A |
|---|---|
| Pd - Power Dissipation | 3.5W |
| RDS(on) | 60mΩ@6V |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Drain to Source Voltage | 100V |
| Type | N-Channel |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | - |
| Gate Charge(Qg) | 24nC@10V |
| Operating Temperature | -55℃~+150℃ |
N-Channel Array 100V 5.9A 3.5W Surface Mount PowerPAK-SO-8-Dual