VISHAY · FETs & Power MOSFETs · MPN SI7942DP-T1-E3
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| Current - Continuous Drain(Id) | 5.9A |
|---|---|
| Pd - Power Dissipation | 1.4W |
| RDS(on) | 49mΩ@10V;60mΩ@6V |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Drain to Source Voltage | 100V |
| Type | N-Channel |
| Number | 2 N-Channel |
| Gate Charge(Qg) | 16nC@10V |
| Operating Temperature | -55℃~+150℃ |
5.9A 1.4W 4V 2 N-Channel POWERPAK-SO-8 FET, MOSFET Arrays RoHS