VISHAY SI7923DN-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI7923DN-T1-GE3

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Specifications

Current - Continuous Drain(Id)6.4A
RDS(on)75mΩ@4.5V
Pd - Power Dissipation2.8W
Gate Threshold Voltage (Vgs(th))3V
Drain to Source Voltage30V
TypeP-Channel
Reverse Transfer Capacitance (Crss@Vds)-
Number2 P-Channel
Input Capacitance(Ciss)-
Gate Charge(Qg)21nC@10V
Operating Temperature-55℃~+150℃

Technical details

P-Channel 30V 6.4A 2.8W Surface Mount PowerPAK1212-8

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