VISHAY · FETs & Power MOSFETs · MPN SI7922DN-T1-E3
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| Current - Continuous Drain(Id) | 2.5A |
|---|---|
| Pd - Power Dissipation | 2.6W |
| RDS(on) | 195mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Drain to Source Voltage | 100V |
| Reverse Transfer Capacitance (Crss@Vds) | 120pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 320pF |
| Gate Charge(Qg) | 8nC@10V |
| Operating Temperature | -55℃~+150℃ |
2.5A 2.6W 195mΩ@10V 2.5V 2 N-Channel PDFN-8(3.3x3.3) FET, MOSFET Arrays RoHS