VISHAY · FETs & Power MOSFETs · MPN SI7904BDN-T1-GE3
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| Gate Charge(Qg) | 24nC@8V |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 110pF |
| Current - Continuous Drain(Id) | 6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 17.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 65pF |
| RDS(on) | 45mΩ@1.8V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 860pF |
| Type | N-Channel |
20V 6A 1V 17.8W 45mΩ@1.8V 2 N-Channel N-Channel PowerPAK1212-8 Single FETs, MOSFETs RoHS