VISHAY SI7904BDN-T1-E3

VISHAY · FETs & Power MOSFETs · MPN SI7904BDN-T1-E3

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Specifications

Gate Charge(Qg)9nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)110pF
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation17.8W
Reverse Transfer Capacitance (Crss@Vds)65pF
RDS(on)25mΩ@4.5V;30mΩ@2.5V;36mΩ@1.8V
Number2 N-Channel
Input Capacitance(Ciss)860pF
TypeN-Channel

Technical details

N-Channel Array 20V 9A 17.8W Surface Mount PowerPAK1212-8

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