VISHAY · FETs & Power MOSFETs · MPN SI7900AEDN-T1-E3
No reviews yet — be the first to review VISHAY SI7900AEDN-T1-E3.
| Configuration | Common Drain |
|---|---|
| Current - Continuous Drain(Id) | 8.5A |
| RDS(on) | 36mΩ@1.8V |
| Pd - Power Dissipation | 3.1W |
| Gate Threshold Voltage (Vgs(th)) | 900mV |
| Drain to Source Voltage | 20V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | - |
| Gate Charge(Qg) | 16nC@4.5V |
| Operating Temperature | -55℃~+150℃ |
8.5A 36mΩ@1.8V 3.1W 900mV 2 N-Channel PowerPAK1212-8 FET, MOSFET Arrays RoHS