VISHAY · FETs & Power MOSFETs · MPN SI7892BDP-T1-GE3
No reviews yet — be the first to review VISHAY SI7892BDP-T1-GE3.
| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 40nC@4.5V |
| Current - Continuous Drain(Id) | 25A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 5W |
| Reverse Transfer Capacitance (Crss@Vds) | 295pF |
| RDS(on) | 5.7mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.775nF |
| Type | N-Channel |
30V 25A 3V 5W 5.7mΩ@4.5V 1 N-channel N-Channel PowerPAK-SO-8 Single FETs, MOSFETs RoHS