VISHAY · FETs & Power MOSFETs · MPN SI7880ADP-T1-GE3
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 37nC@15V |
| Current - Continuous Drain(Id) | 40A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 5.4W |
| RDS(on) | 3mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 320pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.6nF |
30V 40A 1V 5.4W 3mΩ@10V 1 N-channel PowerPAKSO-8 Single FETs, MOSFETs RoHS