VISHAY SI7880ADP-T1-E3

VISHAY · FETs & Power MOSFETs · MPN SI7880ADP-T1-E3

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Specifications

Gate Charge(Qg)37nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation53W
Reverse Transfer Capacitance (Crss@Vds)320pF
RDS(on)3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.6nF

Technical details

N-Channel 30V 30A 53W Surface Mount PowerPAK-SO-8

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