VISHAY · FETs & Power MOSFETs · MPN SI7852DP-T1-GE3
No reviews yet — be the first to review VISHAY SI7852DP-T1-GE3.
| Gate Charge(Qg) | 34nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 7.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 1.9W |
| RDS(on) | 16.5mΩ@10V |
| Number | 1 N-channel |
| Type | N-Channel |
N-Channel 80V 7.6A 1.9W Surface Mount PowerPAKSO-8