VISHAY · FETs & Power MOSFETs · MPN SI7852DP-T1-E3
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 41nC@10V |
| Drain to Source Voltage | 80V |
| Output Capacitance(Coss) | - |
| Current - Continuous Drain(Id) | 12.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 22mΩ@6V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
80V 12.5A 22mΩ@6V 1 N-channel N-Channel PowerPAK-SO-8 Single FETs, MOSFETs RoHS