VISHAY SI7852ADP-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI7852ADP-T1-GE3

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Specifications

Gate Charge(Qg)45nC@10V
Drain to Source Voltage80V
Output Capacitance(Coss)220pF
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation62.5W
Reverse Transfer Capacitance (Crss@Vds)75pF
RDS(on)-
Number1 N-channel
Input Capacitance(Ciss)1.825nF
TypeN-Channel

Technical details

80V 30A 4.5V 62.5W 1 N-channel N-Channel PowerPAK-SO-8 Single FETs, MOSFETs RoHS

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