VISHAY SI7852ADP-T1-E3

VISHAY · FETs & Power MOSFETs · MPN SI7852ADP-T1-E3

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Specifications

Gate Charge(Qg)30.5nC@10V
Drain to Source Voltage80V
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation5W
Reverse Transfer Capacitance (Crss@Vds)75pF
RDS(on)17mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.825nF

Technical details

80V 30A 2.5V 5W 17mΩ@10V 1 N-channel PowerPAK-SO-8 Single FETs, MOSFETs RoHS

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