VISHAY · FETs & Power MOSFETs · MPN SI7852ADP-T1-E3
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| Gate Charge(Qg) | 30.5nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 30A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 5W |
| Reverse Transfer Capacitance (Crss@Vds) | 75pF |
| RDS(on) | 17mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.825nF |
80V 30A 2.5V 5W 17mΩ@10V 1 N-channel PowerPAK-SO-8 Single FETs, MOSFETs RoHS