VISHAY · FETs & Power MOSFETs · MPN SI7850DP-T1-GE3
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| Gate Charge(Qg) | 27nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | - |
| Current - Continuous Drain(Id) | 10.3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 900mW |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 31mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
| Vgs | ±20V |
N-Channel 60V 10.3A 0.9W Surface Mount PowerPAKSO-8