VISHAY · FETs & Power MOSFETs · MPN SI7850DP-T1-E3
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| Gate Charge(Qg) | 18nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 10.3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 4.5W |
| RDS(on) | 22mΩ@10V |
| Number | 1 N-channel |
60V 10.3A 1V 4.5W 22mΩ@10V 1 N-channel PowerPAK-SO-8 Single FETs, MOSFETs RoHS