VISHAY · FETs & Power MOSFETs · MPN SI7846DP-T1-E3
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| Gate Charge(Qg) | 30nC@10V |
|---|---|
| Drain to Source Voltage | 150V |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 1.9W |
| RDS(on) | 50mΩ@10V |
| Number | 1 N-channel |
| Type | N-Channel |
N-Channel 150V 4A 1.9W Surface Mount PowerPAKSO-8