VISHAY · FETs & Power MOSFETs · MPN SI7820DN-T1-E3
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| Gate Charge(Qg) | 18nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 1.7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 1.5W |
| RDS(on) | 240mΩ@10V |
| Number | 1 N-channel |
| Type | N-Channel |
N-Channel 200V 1.7A 1.5W Surface Mount PowerPAK1212-8