VISHAY SI7812DN-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI7812DN-T1-GE3

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Specifications

Drain to Source Voltage75V
Gate Charge(Qg)24nC@10V
Output Capacitance(Coss)110pF
Current - Continuous Drain(Id)16A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation3.8W
Reverse Transfer Capacitance (Crss@Vds)50pF
RDS(on)46mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)840pF
TypeN-Channel

Technical details

75V 16A 3V 3.8W 46mΩ@4.5V 1 N-channel N-Channel PowerPAK1212-8 Single FETs, MOSFETs RoHS

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