VISHAY SI7806ADN-T1-E3

VISHAY · FETs & Power MOSFETs · MPN SI7806ADN-T1-E3

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)20nC@5V
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation1.5W
RDS(on)11mΩ@10V
Number1 N-channel
Vgs±20V
TypeN-Channel

Technical details

N-Channel 30V 9A 1.5W Surface Mount PowerPAK1212-8

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