VISHAY · FETs & Power MOSFETs · MPN SI7804DN-T1-E3
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| Gate Charge(Qg) | 13nC@5V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 10A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 18.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
30V 10A 1.8V 18.5mΩ@10V 1 N-channel PowerPAK1212-8 Single FETs, MOSFETs RoHS