VISHAY · FETs & Power MOSFETs · MPN SI7720DN-T1-GE3
No reviews yet — be the first to review VISHAY SI7720DN-T1-GE3.
| Gate Charge(Qg) | 45nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 12A |
| Operating Temperature - | -50℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 3.8W;52W |
| Reverse Transfer Capacitance (Crss@Vds) | 130pF |
| RDS(on) | 12.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.79nF |
30V 12A 1.2V 12.5mΩ@10V 1 N-channel Single FETs, MOSFETs RoHS